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MMDT3904 Datasheet(PDF) 1 Page - Jinan Jing Heng Electronics Co., Ltd. |
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MMDT3904 Datasheet(HTML) 1 Page - Jinan Jing Heng Electronics Co., Ltd. |
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1 / 5 page ![]() MMDT3904 NPN+NPN Plastic-Encapsulate Transistors Ideal for low power amplification and switching Power dissipation of 200mW JINAN JINGHENG ELECTRONICS CO., LTD. 5-1 HTTP://WWW.JINGHENG.CN R S E M I C O N D U C T O R SOT-363 FEATURES MAXIMUM RATINGS(TA=25°C Unless otherwise specified) MECHANICAL DATA Case:SOT-363 Terminals:Plated solderable per MIL-STD-750,method 2026 Mounting Position: Any High stability and high Reliability Epitaxial planar die construction Symbol Unit Value Collector-Emitter Voltage VCEO V Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO V Collector Current, Continuous IC mA Collector Power Dissipation PD mW Operation Junction Temperature TJ ℃ -55 to +150 Storage Temperature TSTG ℃ -55 to +150 Thermal resistance From junction to ambient RØJA ℃/W 625 Parameter 60 5 200 200 40 6 5 4 1 2 3 1 2 3 6 5 4 Marking:K6N |
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