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MBUS1BS Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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MBUS1BS Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page  2013 10 22 2/3 Revision No : 0 MBUS1BS ~ MBUS1MS ■ Electrical Characteristics（Ta=25℃ Unless otherwise specified） Max Item Symbol Unit Test Condition BS DS GS JS KS MS Peak Forward Voltage VFM V IFM=0.4A, Pulse measurement, Rating of per diode 1.0 1.30 1.70 Peak Reverse Current IRRM μ A VRM=VRRM , Pulse measurement, Rating of per diode 10 Reverse Recovery Time Trr ns IF=0.5A IRM=1A IRR=0.25A 50 75 Between junction and ambient, On alumina substrate 76 RθJ-A Between junction and ambient, On glass- epoxi substrate 134 Thermal Resistance RθJ-L ℃ /W Between junction and lead 20 |
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