2SK3003 datasheet(1/5 Pages) DOINGTER

Part #	2SK3003

Description	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=200V,ID=18A,RDS(ON)<1.8Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

±

30

V

ID

Continuous Drain Current- TC=25℃

18

A

Continuous Drain Current-TC=100℃

11.9

EAS

Single Pulse Avalanche Energy(Note1)

250

mJ

IAR

Avalanche Current (Note2)

18

A

PD

Power Dissipation

139

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

TL

Maximum lead temperature for soldering purpose,1/8”

from case for 5 seconds

300

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

3.1

℃

/W

D S

G

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2SK3003 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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