JCS730R-O-R-N-A datasheet(3/5 Pages) DOINGTER

3 / 5 page

www.doingter.cn

—

3 —

Continuous Source Current

---

lsm

Pulsed Source Current

---

160

trr

Reverse Recovery Time

---

qrr

Reverse Recovery Charge

---

Notes:

Typical Characteristics： (T

C=25℃ unless otherwise noted)

S=6A,VGS =0V

diF/dt=100A/μs (Note3)

---

1, L=17.9mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature

3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4, Essentially Independent of Operating Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

0.5

1.0

1.5

2.0

2.5

3.0

3.5

GS = 20V

GS = 10V

※ Note : T

J = 25

℃

D, Drain Current [A]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

DS, Drain-Source Voltage [V]

246

-1

150

-55

※ Notes :

1. V

DS = 40V

2. 250μ s Pulse Test

GS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

JCS730R-O-R-N-A

JCS730R-O-R-N-A Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

JCS730R-O-R-N-A Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Html Pages

1 2 3 4 5

Datasheet Download

Link URL