UT4420G-S08-R datasheet(4/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.005

0.010

0.015

0.020

0.025

0.030

TJ =25 °C

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

Time (s)

100

600

10-1

10-2

10-3

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

100 µA

10 s

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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UT4420G-S08-R

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