HM5N65K datasheet(2/9 Pages) HMSEMI

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Electrical Characteristics T

C = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 22 mH, IAS = 4.5 A, VDD = 25V, RG = 25 Starting TJ = 25°C

3. ISD  4.5 A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width  300s, Duty cycle  2%

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

650



BVDSS



Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25°C

0.6

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 650 V, VGS = 0 V



VDS = 520 V, TC = 125°C



IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 2.0 A

2.5

3.0



Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

560

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 325 V, ID = 4.5 A,

RG = 25 

(Note 4, 5)

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS = 520 V, ID = 4.5 A,

VGS = 10 V

(Note 4, 5)

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

6.5

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

4.5

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 4.5 A

1.4

trr

Reverse Recovery Time

VGS = 0 V, IS = 4.5 A,

dIF / dt = 100 A/s

(Note 4)

300

Qrr

Reverse Recovery Charge

2.0



HM5N65K/HM5N65I

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM5N65K Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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