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HM3N150F Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM3N150F
Description  N-channel Enhanced VDMOSFETs
PDF  6 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM3N150F Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Electrical Characteristics（TJ= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter
Test Conditions
Rating
Unit
s
Min.
Typ.
Max.
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
1500
--
--
V
ΔBV
DSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
1.3
--
V/℃
IDSS
Drain to Source Leakage Current
VDS =1500V, VGS= 0V,
TJ = 25℃
--
--
25
µA
VDS =1200V, VGS= 0V,
TJ = 125℃
--
--
500
µA
IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1.5A
--
5.0
8.0
Ω
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
gfs
Forward Trans conductance
VDS=30V, ID =1.5A
--
4.5
--
S
Rg
Gate resistance
f = 1.0MHz
--
3.5
--
Ω
Ciss
Input Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
--
1938
--
pF
Coss
Output Capacitance
--
104
--
Crss
Reverse Transfer Capacitance
--
2.4
--
Resistive Switching Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
td(ON)
Turn-on Delay Time
ID =3A
VDD = 750V
RG =10Ω
--
33.8
--
ns
tr
Rise Time
--
16.7
--
td(OFF)
Turn-Off Delay Time
--
56.0
--
tf
Fall Time
--
27.6
--
Qg
Total Gate Charge
ID =3A
VDD =750V
VGS = 10V
--
9.3
--
nC
Qgs
Gate to Source Charge
--
14.9
--
Qgd
Gate to Drain (“Miller”)Charge
--
5.3
--
HM3N150A



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