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UT60N03L-TN3-R Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # UT60N03L-TN3-R
Description  N-Channel 20-V (D-S)175 C MOSFET
PDF  6 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT60N03L-TN3-R Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
N-Channel 20-V (D-S)175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
20
0.006 @ VGS = 4.5 V
65
20
0.008 @ VGS = 2.5 V
45
D
G
S
N-Channel MOSFET
TO-252
S
GD
Top View
Drain Connected to Tab
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
"15
V
Continuous Drain Currenta
TC = 25_C
ID
65
Continuous Drain Currenta
TC = 100_C
ID
42
A
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)a
IS
65
Maximum Power Dissipation
TC = 25_C
PD
71
W
Maximum Power Dissipation
TA = 25_C
PD
8.3b, c
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b
t v 10 sec.
15
18
Maximum Junction-to-Ambientb
Steady State
RthJA
40
50
_C/W
Maximum Junction-to-Case
RthJC
1.75
2.1
Notes
a.
Package Limited
b.
Surface Mounted on 1” x 1” FR4 Board
c.
t v 10 sec
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT60N03L-TN3-R
1


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