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BU406 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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BU406 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() SEMICONDUCTOR TECHNICAL DATA BU406 2020. 02. 18 1/3 Revision No : 1 BU406 TRANSISTOR (NPN) FEATURES High Voltage Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Pb −Free Packages are Available* MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltag V(BR)CBO IC=100uA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO * IC=100mA,IB=0 200 V Emitter-base breakdown voltage V(BR)EBO IE=100uA,IC=0 6 V Collector cut-off current ICES VCB=400V,IE=0 5 mA Collector cut-off current ICES VCB=250V,IE=0 1 mA Collector cut-off current ICBO VCB=300V,IE=0 5 μA Emitter cut-off current IEBO VEB=6V,IC=0 1 mA DC current gain hFE VCE=5V, IC=1A 50 100 Collector-emitter saturation voltage VCE(sat) * IC=5A,IB=500mA 1 V Base-emitter saturation voltage VBE(sat) * IC=5A,IB=500mA 1.2 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 80 pF Transition frequency fT VCE=5V,IC=0.2A,f=10MHz 10 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current 7 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance from Junction to Ambient 62.5 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ TO-220 1. BASE 2. COLLECTOR 3. EMITTER |
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