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BU406 Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part # BU406
Description  TRANSISTOR (NPN) High Voltage
PDF  3 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

BU406 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

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SEMICONDUCTOR
TECHNICAL DATA
BU406
2020. 02. 18
1/3
Revision No : 1
BU406
TRANSISTOR (NPN)
FEATURES
High Voltage
Fast Switching Speed: tf = 750 ns (max)
Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
Pb
−Free Packages are Available*
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltag
V(BR)CBO
IC=100uA, IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
*
IC=100mA,IB=0
200
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100uA,IC=0
6
V
Collector cut-off current
ICES
VCB=400V,IE=0
5
mA
Collector cut-off current
ICES
VCB=250V,IE=0
1
mA
Collector cut-off current
ICBO
VCB=300V,IE=0
5
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
1
mA
DC current gain
hFE
VCE=5V, IC=1A
50
100
Collector-emitter saturation voltage
VCE(sat)
*
IC=5A,IB=500mA
1
V
Base-emitter saturation voltage
VBE(sat)
*
IC=5A,IB=500mA
1.2
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
80
pF
Transition frequency
fT
VCE=5V,IC=0.2A,f=10MHz
10
MHz
*Pulse test: pulse width
≤300μs, duty cycle≤ 2.0%.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
7
A
PC
Collector Power Dissipation
2
W
RθJA
Thermal Resistance from Junction to Ambient
62.5
℃/W
Operation Junction and Storage Temperature Range
TJ,Tstg
-55~+150
TO-220
1. BASE
2. COLLECTOR
3. EMITTER


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