AF8510C

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Nov 14, 2005

3/8

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

-30

-

-

V

BV

　

T

Breakdown Voltage Temperature

Coefficient

Reference to 25

-

-0.023

-

V/

-

-

55

-

-

90

mΩ

Gate Threshold Voltage

1

-

-3

V

Forward Transconductance

-

4.9

-

S

Drain-Source Leakage Current

-

-

-1

Drain-Source Leakage Current

-

-

-25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge (Note 3)

-

9

15

Gate-Source Charge

-

2

-

Gate-Drain (“Miller”) Charge

-

6

-

nC

Turn-On Delay Time (Note 3)

-

10

-

Rise Time

-

8

-

Turn-Off Delay Time

-

25

-

Fall-Time

-

13

-

ns

Input Capacitance

-

580

930

Output Capacitance

-

180

-

Reverse Transfer Capacitance

f=1.0MHz

-

120

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-

-

-1.2

V

-

21

-

ns

Reverse Recovery Charge

dl/dt=100A/µs

-

17

-

nC

Note 1: Surface mounted on 1 in

Note 2: Pulse width limited by Max. junction temperature.

Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.