L2SC2412KQLT1G datasheet(1/4 Pages) LEIDITECH

Part #	L2SC2412KQLT1G

Description	general purpose transistors NPN Silicon

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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1

SOT– 23

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

50

V

Collector–Base Voltage

V CBO

60

V

Emitter–Base Voltage

V EBO

7.0

V

Collector Current — Continuous

I C

150

mAdc

Collector power dissipation

P C

0.2

W

Junction temperature

T j

150

°C

Storage temperature

T stg

-55 ~+150

°C

DEVICE MARKING

L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

V (BR)CEO

50

—

V

(IC = 1 mA)

Emitter–Base Breakdown Voltage

V (BR)EBO

7—

—

V

(IE = 50

µA)

Collector–Base Breakdown Voltage

V (BR)CBO

60

—

V

(IC = 50

µA)

Collector Cutoff Current

I CBO

—

0.1

µA

(VCB = 60 V)

Emitter cutoff current

I EBO

—

0.1

µA

(VEB = 7 V)

Collector-emitter saturation voltage

V CE(sat)

—

0.4

V

(IC/ IB = 50 mA / 5m A)

DC current transfer ratio

h FE

120

––

560

––

(V CE = 6 V, I C= 1mA)

Transition frequency

f T

—

180

––

MHz

(V CE = 12 V, I E= – 2mA, f =30MHz )

Output capacitance

C ob

—

2.0

3.5

pF

(V CB = 12 V, I E= 0A, f =1MHz )

h FE values are classified as follows:

QR

S

hFE

120~270

180~390

270~560

2

EMITTER

3

COLLECTOR

1

BASE

*

•

Device

Marking

Shipping

L2SC2412KQLT1G

BQ

BR

G1F

3000 Tape & Reel

10000 Tape & Reel

3000 Tape & Reel

10000 Tape & Reel

3000 Tape & Reel

10000 Tape & Reel

ORDERING INFORMATION

L2SC2412KQLT3G

L2SC2412KRLT1G

L2SC2412KRLT3G

L2SC2412KSLT1G

L2SC2412KSLT3G

BR

BQ

G1F

We declare that the material of product compliance with RoHS requirements.

L2SC2412KQLT1G Series

2

3

•S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S-L2SC2412KQLT1G

S-L2SC2412KQLT3G

S-L2SC2412KRLT1G

S-L2SC2412KRLT3G

S-L2SC2412KSLT1G

S-L2SC2412KSLT3G

general purpose transistors NPN Silicon

Rev :

www.leiditech.com

01.06.2017

1/4

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