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MMBT3904T Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # MMBT3904T
Description  General Purpose Transistor NPN Silicon Surface Mount Plastic Package
PDF  3 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

MMBT3904T Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  MMBT3904T Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd MMBT3904T Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd MMBT3904T Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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On Characteristics (Note 1)
Symbol
Parameter
Test Condition
Limits
Unit
Min
Max
HFE
DC Current Dain
IC =0.1mA, VCE =1V
IC =1.0mA, VCE =1V
IC =10mA, VCE =1V
IC =50mA, VCE =1V
IC =100mA, VCE =1V
40
70
100
60
30
-
-
300
-
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
-
-
0.2
0.3
Volts
VBE(sat)
Base-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.65
-
0.85
0.95
Volts
Small-signal Characteristics
Symbol
Parameter
Test Condition
Limits
Unit
Min
Max
fT
Current-Gain-Bandwidth Product
IC =10mA, VCE =20V, f = 100MHz
200
-
MHz
Cobo
Output Capacitance
VCB =5V, IE =0A, f = 1.0MHz
-
4
pF
Cibo
Input Capacitance
VBE =0.5V, IC =0A, f = 1.0MHz
-
8
pF
hie
Input Impedancen
VCE =10V, IC =1mA, f = 1.0kHz
1
10
pF
hre
Voltage Feedback Ratio
VCE =10V, IC =1mA, f = 1.0kHz
0.5
8
X10
-4
hfe
Small-signal Current Gain
VCE =10V, IC =1mA, f = 1.0kHz
100
400
-
hoe
Output Admittance
VCE =10V, IC =1mA, f = 1.0kHz
1
40
θ
mhos
NF
Noise Figure
VCE =5V, IC =100uA
Rs=1.0kΩ f = 1.0kHz
5
dB
Switching Characteristics
Symbol
Parameter
Test Condition
Limits
Unit
Min
Max
td
tr
Delay Time
Rise Time
VCC =3V, VBE =0.5V,
IC =10mA, IB1 =1mA
-
-
35
35
nS
ts
tf
Storage Time
Fall Time
VCC =3V, IC =10mA,
IB1 = IB2 =1mA
-
-
200
50
nS
MMBT3904T
Rev :
www.leiditech.com
01.06.2018
2/3



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