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SS8050HQLT3G Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # SS8050HQLT3G
Description  General Purpose Transistors NPN Silicon
PDF  3 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

SS8050HQLT3G Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5V
Collector Current
C
1500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
PD
TA=25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance,Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
PD
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance,Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
T j, T St g
-55 to +150
°C
1
BASE
2
EMITTER
COLLECTOR
3
NPN Silicon
FEATURE
High current capacity in compact package.
IC =1.5 A.
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
1HA
1HA
1HC
1HC
10000/Tape&Reel
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
1HE
1HE
1HG
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
1HG
I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Dimensions SOT-23
Pin Configuration
S-
SS8050HPLT1G
SS8050HPLT1G
S-SS8050HPLT3G
S-SS8050HQLT1G
S-SS8050HQLT3G
S-SS8050HRLT1G
S-SS8050HRLT3G
S-SS8050HSLT1G
S-SS8050HSLT3G
SS8050HPLT3G
SS8050HQLT1G
SS8050HQLT3G
SS8050HRLT1G
SS8050HRLT3G
SS8050HSLT1G
SS8050HSLT3G
Rev :
www.leiditech.com
1/3
01.06.2015
SS8050


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