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SWD2N70 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SWD2N70
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWD2N70 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
—
RƟJA
Thermal Resistance Junction to mbient
110
Electrical Characteristics：(TA=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
700
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=700V
---
---
10
μ
A
VDS=560V,
TJ=125℃
---
---
100
μ
A
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
3
---
5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=1A
---
---
6.3
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
260
---
pF
Coss
Output Capacitance
---
36
---
Crss
Reverse Transfer Capacitance
---
4.7
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=350V,ID=2A,
RG=25Ω(Note 3,4)
---
---
30
ns
tr
Rise Time
---
---
80
ns
td(off)
Turn-Off Delay Time
---
---
50
ns
tf
Fall Time
---
---
70
ns
Qg
Total Gate Charge
VGS=10V, VDS=560V,
ID=2A(Note 3,4)
---
9
12
nC
Qgs
Gate-Source Charge
---
1.7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
4.4
---
nC
Drain-Source Diode Characteristics
℃
/W
2
SWD2N70



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