IRG4CC71KB

IRG4CC71KB IGBT Die in Wafer Form

11/28/05

Nominal Backmetal Composition, Thickness:

Cr-NiV-Ag ( 1kA-2kA-.2.5kA )

Nominal Front Metal Composition, Thickness:

99% Al, 1% Si (4 microns)

Dimensions:

0.305" x 0.390"

Wafer Diameter:

150mm, with std. < 100 > flat

Wafer thickness:

.015" + / -.003"

Relevant Die Mechanical Dwg. Number01-5271

Minimum Street Width

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Ink Dot Location

Consistent throughout same wafer lot

Recommended Storage Environment:

Store in original container, in dessicated

nitrogen, with no contamination

Recommended Die Attach Conditions

For optimum electrical results, die attach

temperature should not exceed 300C

Mechanical Data

Die Outline

Reference Standard IR packaged part ( for design ) : IRG4PSC71K

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

Collector-to-Emitter Saturation Voltage

1.7V Max.

Colletor-to-Emitter Breakdown Voltage

600V Min.

Gate Threshold Voltage

3.0V Min., 6.5V Max.

Zero Gate Voltage Collector Current

300 µA Max.

Gate-to-Emitter Leakage Current

± 1.1 µA Max.

Electrical Characteristics ( Wafer Form )

E

C

G

600 V

Size 7.1

Ultra-Fast Speed

Circuit Rated Rated

6" Wafer

www.irf.com

PD- 91834A