UTL1426L-S08-R datasheet(1/7 Pages) DOINGTER

Part #	UTL1426L-S08-R

Description	P-Channel MOSFET uses advanced trench technology

PDF	7 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This P-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=-30V,ID=-15A,RDS(ON)<11mΩ@VGS=-20V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

A

-15

A

Continuous Drain Current-TC=70℃

A

-12

IDM

-80

PD

Power Dissipation

A =(Ta=25℃)

3

Power Dissipation

A =(Ta=100℃)

2.1

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

Thermal Resistance,Junction to Ambient

A

40

℃/ W

RƟJA

75

G

D

S

W

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