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UTT31N10ML-TN3-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTT31N10ML-TN3-R
Description  N-Channel MOSFET uses advanced SGT technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT31N10ML-TN3-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
RƟJA
Thermal Resistance,Junction to Ambient
62
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=100V,
TJ=25℃
---
---
1
μ
A
VGS=0V, VDS=80V,
TJ=125℃
---
---
10
μ
A
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.5
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=14A
---
20
24
mΩ
VGS=4.5V,ID=10A
---
27
35
GFS
Forward Transconductance
VDS=10V , ID=3A
---
9
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=1MHz
---
600
1180
pF
Coss
Output Capacitance
---
480
950
Crss
Reverse Transfer Capacitance
---
24
48
Switching Characteristics
td(on)
Turn-On Delay Time3,4
VDD=50V, ID=1A,
VGS=10V,RG=3.3Ω
---
12.5
25
ns
tr
Rise Time3,4
---
11
22
ns
td(off)
Turn-Off Delay Time3,4
---
32
64
ns
tf
Fall Time3,4
---
13
26
ns
Qg
Total Gate Charge3,4
VGS=10V, VDS=50V,
ID=10A
---
9.8
18
nC
Qgs
Gate-Source Charge3,4
---
1.8
2.5
nC
℃
/W
Qgd
Gate-Drain Charge3,4
---
2.6
4
nC
UTT31N10ML-TN3-R



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