WeEn Semiconductors

WB35SD160AL

Standard power diode - Bare die

WB35SD160AL

Product data sheet

All information provided in this document is subject to legal disclaimers.

25 August 2020

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5. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse voltage

-

1600

V

crest working reverse voltage

-

1600

V

reverse voltage

DC

-

1600

V

average forward current

δ = 0.5; square-wave pulse

-

35

A

-

70

A

non-repetitive peak forward

current

pulse

-

450

A

pulse

-

494

A

storage temperature

-40

150

°C

junction temperature

150

°C

6. Characteristics

Table 7. Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

forward voltage

-

1.15

1.2

V

-

1.1

1.15

V

reverse current

-

-

50

μA

-

-

1

mA

reverse current

-

-

1.5

mA

Notes:

(2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly

assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this

data sheet, similar to the assembled devices.