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D1985 Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part # D1985
Description  Silicon NPN triple diffusion planar type(For power amplification)
PDF  2 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

D1985 Datasheet(HTML) 2 Page - Panasonic Semiconductor

  D1985 Datasheet HTML 1Page - Panasonic Semiconductor D1985 Datasheet HTML 2Page - Panasonic Semiconductor  
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2
Power Transistors
2SD1985, 2SD1985A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(3)
(2)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
5
4
3
2
1
T
C=25˚C
I
B=100mA
90mA
80mA
70mA
60mA
40mA
30mA
20mA
10mA
50mA
Collector to emitter voltage V
CE
(V)
02.4
2.0
1.6
0.4
1.2
0.8
0
8
6
2
5
7
4
1
3
T
C=100˚C
25˚C
–25˚C
V
CE=4V
Base to emitter voltage V
BE
(V)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=8
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
f=10MHz
T
C=25˚C
Collector current I
C
(A)
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
10ms
t=1ms
DC
I
CP
I
C
Non repetitive pulse
T
C=25˚C
Collector to emitter voltage V
CE
(V)
10–4
10
10–3
10–1
10–2
1103
102
104
0.1
1
10
100
10000
1000
Note: R
th was measured at Ta=25˚C and under natural convection.
(1) P
T=10V × 0.2A (2W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)



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