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SC3S06504C Datasheet(PDF) 2 Page - Rectron Semiconductor

Part # SC3S06504C
Description  650/4A silicon Carbide Power Schottky Barrier Diode
PDF  5 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

SC3S06504C Datasheet(HTML) 2 Page - Rectron Semiconductor

  SC3S06504C Datasheet HTML 1Page - Rectron Semiconductor SC3S06504C Datasheet HTML 2Page - Rectron Semiconductor SC3S06504C Datasheet HTML 3Page - Rectron Semiconductor SC3S06504C Datasheet HTML 4Page - Rectron Semiconductor SC3S06504C Datasheet HTML 5Page - Rectron Semiconductor  
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MaximumRatings
ThermalCharacteristics
ElectricalCharacteristics
Parameter
Symbol
Test Condition
Value
Unit
Repetitive Peak Reverse
Voltage
VRRM
650
V
Surge Peak Reverse
Voltage
VRSM
650
DCBlockingVoltage
VDC
650
Continuous Forward
Current
IF
TC=25
TC=135
TC=150
11
5
4
A
Repetitive Peak Forward
Surge Current
IFRM
TC=25
,tp=10ms
HalfSineWave
D=0.3
15
A
NonrepetitivePeak
ForwardSurge Current
IFSM
TC=25
,tp=10ms
HalfSineWave
30
A
TC=25
53.2
W
PowerDissipation
PTOT
TC=110
23
W
OperatingJunction
Tj
55
to 175
StorageTemperature
Tstg
55
to 175
Mounting Torque
M3Screw
632Screw
1
8.8
Nm
lbf in
Value
Parameter
Symbol
TestCondition
Typ.
Unit
Thermalresistancefrom
junctiontocase
RthJC
2.82
/W
Numerical
Parameter
Symbol
TestConditions
Typ.
Max.
Unit
IF=4A, Tj=25
1.55
1.7
ForwardVoltage
VF
IF=4A, Tj=175
2.2
2.5
V
VR=650V,Tj=25
10
100
ReverseCurrent
IR
VR=650V,Tj=175
20
200
μA
TotalCapacitive Charge
QC
VR=400V, Tj=150
dV
V
C
Qc
VR
)
(
0
³
11
nC
VR=0V,Tj=25
,f=1MHZ
181
220
VR=200V, Tj=25 , f=1MHZ
22.5
25
TotalCapacitance
C
VR=400V, Tj=25 , f=1MHZ
20.5
21
pF



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