MSCSM170HM087CAG datasheet(4/16 Pages) MICROCHIP

4 / 16 page

The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM170HM087CAG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 1000 V

f = 1 MHz

—

13200

—

Coss

Output capacitance

—

600

—

Crss

Reverse transfer

capacitance

—

Total gate charge

VGS = –5 V/20 V

VBus = 850 Vz

ID = 120 A

—

712

—

Qgs

Gate-source charge

—

196

—

Qgd

Gate-drain charge

—

108

—

Td(on)

Turn-on delay time

VGS = –5 V/20 V

VBus = 900 V

ID = 200 A

TJ = 150 °C

RGON = 7 Ω

RGOFF = 4 Ω

—

Rise time

—

Td(off)

Turn-off delay time

—

153

—

Fall time

—

Eon

Turn-on energy

VGS = –5 V/20 V

VBus = 900 V

ID = 200 A

RGON = 7 Ω

RGOFF = 4 Ω

TJ = 150 °C —

—

Eoff

Turn-off energy

TJ = 150 °C —

4.8

—

RGint

Internal gate resistance

—

1.46

—

RthJC

Junction-to-case thermal resistance

—

0.135

°C/W

The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the MSCSM170HM087CAG

device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward voltage

VGS = 0 V; ISD = 120 A

—

3.7

—

VGS = –5 V; ISD = 120 A

—

3.9

—

trr

Reverse recovery time

ISD = 120 A

VGS = –5 V

VR = 900 V

diF/dt = 4000 A/µs

—

Qrr

Reverse recovery charge

—

2600

—

Irr

Reverse recovery current

—

184

—

MSCSM170HM087CAG

Electrical Specifications

Datasheet

DS00003994A-page 4

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