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IXFN23N100 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN23N100 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() «=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ S G S D miniBLOC, SOT-227 B (IXFN) E153432 Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density G = Gate D = Drain S = Source báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ ~ë=j~áå=çê=hÉäîáå=pçìêÅÉ Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. V DSS V GS = 0 V, ID = 3mA 1000 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.0 V I GSS V GS = ±20V, VGS = 0V ±100 nA I DSS V DS = VDSS T J = 25 °C 100 µA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10V, ID = 0.5 • ID25 23N100 0.43 Ω Note 2 24N100 0.39 Ω VURVTa= ENMLMMF HiPerFETTM Power MOSFET Single MOSFET Die Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 1000 V V DGR T J = 25°C to 150°C, R GS = 1MΩ 1000 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C 24N100 24 A 23N100 23 A I DM T C = 25°C; Note 1 24N100 96 A 23N100 92 A I AR T C = 25 °C 24 A E AR T C = 25 °C 60 mJ E AS T C = 25 °C 3 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns T J ≤ 150°C, R G = 2 Ω P D T C = 25 °C 600 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 °C V ISOL 50/60 Hz, RMS t = 1 min 2500 V~ I ISOL ≤ 1 mA t = 1 s 3000 V~ M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.5/13 Nm/lb.in. Weight 30 g Preliminary data sheet V DSS I D25 R DS(on) IXFN 24N100 1000 V 24 A 0.39 Ω Ω Ω Ω Ω IXFN 23N100 1000 V 23 A 0.43 Ω Ω Ω Ω Ω t êê ≤ ≤≤≤≤ 250 ns |
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