AOU417L datasheet(4/5 Pages) AOSMD

Part #	AOU417L

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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4 / 5 page

AOU417

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10µs

0.1

100

0.1

100

-VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10µs

100µs

10ms

1ms

RDS(ON)

limited

TJ(Max)=175°C, TA=25°C

100m

10s

-Qg (nC)

Figure 7: Gate-Charge Characteristics

VDS=-15V

ID=-18A

500

1000

1500

2000

2500

-VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

Coss

Crss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/T

TJ,PK=TC+PDM.ZθJC.RθJC

RθJC=3°C/W

Ton

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

120

160

200

0.0001

0.001

0.01

0.1

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

TJ(Max)=175°C

TA=25°C

Alpha & Omega Semiconductor, Ltd.

AOU417L Datasheet(PDF) 4 Page - Alpha & Omega Semiconductors

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