PV6D2DA datasheet(4/4 Pages) NIKOSEM

Part #	PV6D2DA

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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4 / 4 page

L-10-5

Dual N-Channel Enhancement Mode

Field Effect Transistor

PV6D2DA

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.1

Source-Drain Diode Forward Voltage

Gate charge Characteristics

Characteristics

Qg , Total Gate Charge(nC)

VSD, Source-To-Drain Voltage(V)

Single Pulse Maximum Power Dissipation

Safe Operating Area

VDS, Drain-To-Source Voltage(V)

Single Pulse Time(s)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration(s)

VDS=20V

ID=6.4A

150℃

25℃

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001

0.01

0.1

100

Single Pulse

θJA = 88 ˚C/W

TA = 25

˚C

single pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJA = 88 ℃/W

3.TJ-TA = P*RthJA(t)

4.RthJA(t) = r(t)*RthJA

100ms

10ms

1ms

10S

0.01

0.1

100

0.1

100

NOTE :

1.VGS = 10V

2.TA =25

˚C

3.R

θJA = 88 ˚C/W

4.Single Pulse

Operation in This

Area is Limited by

RDS(ON)

PV6D2DA Datasheet(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD.

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