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2SC3866A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SC3866A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3866A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC3866A
DESCRIPTION
·
High Breakdown Voltage
: V(BR)CBO= 1000V(Min)
·
High Switching Speed
·
High Reliability
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching regulators
·
Ultrasonic generators
·
High frequency inverters
·
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.0
℃
/W


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