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QPA2225DEVBA Datasheet(PDF) 2 Page - Qorvo, Inc

Part # QPA2225DEVBA
Description  28 ??38 GHz 0.4 Watt GaN Driver Amplifier
PDF  23 Pages
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Manufacturer  QORVO [Qorvo, Inc]
Direct Link  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPA2225DEVBA Datasheet(HTML) 2 Page - Qorvo, Inc

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QPA2225D
28 – 38 GHz 0.4 Watt GaN Driver Amplifier
Data Sheet Rev. B, May 2021 | Subject to change without notice
2 of 23
www.qorvo.com
®
Recommended Operating Conditions
Parameter
Min
Typ.
Max
Units
Drain Voltage (VD)
+20
V
Drain Current, (IDQ)
64
mA
Drain Current, RF (ID_Drive)
See chart page 6
mA
Gate Voltage Range (VG)
−2 to -2.9
V
Gate Current, RF (IG_Drive)
See chart page 6
mA
TBASE Range
−40
+85
ºC
Electrical
specifications
are
measured
at
specified
test
conditions.
Specifications are not guaranteed over all
recommended operating conditions.
Absolute Maximum Ratings
Parameter
Value / Range
Drain Voltage (VD)
29.5 V
Gate Voltage Range (VG)
-6 V to 0 V
Drain Current (ID)
456 mA
Gate Current (IG)
See plot page 18
Power Dissipation (PDISS), 85 °C
5 W
Input Power (PIN), CW,
50 Ω,
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C
18 dBm
Input Power (PIN), CW, 3:1 VSWR,
VD = 20 V, IDQ = 64 mA, TBASE = 85 °C
18 dBm
Mounting Temperature (30 seconds)
320 ºC
Storage Temperature
-55 to +150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditions (1) (2)
Min
Typ.
Max
Units
Operational Frequency Range
28
38
GHz
Output Power at Saturation, PSAT
PIN = +13 dBm
> 26
dBm
Large Signal Gain
PIN = +13 dBm
> 13
dB
Small Signal Gain, S21
> 23
dB
Input Return Loss, IRL
5
dB
Output Return Loss, ORL
5
dB
3RD Intermodulation Products, IM3
POUT/Tone = 20 dBm; Freq. = 35 GHz;
Δf = 100 MHz
-20
dBc
5TH Intermodulation Products, IM5
POUT/Tone = 20 dBm; Freq. = 35 GHz;
Δf = 100 MHz
-30
dBc
PSAT Temperature Coefficient
TDIFF =
−40 ºC to +85 ºC; PIN = +13 dBm
-0.02
dBm/ºC
S21 Temperature Coefficient
TDIFF =
−40 ºC to +85 ºC
-0.07
dB/ºC
Notes:
1.
Test conditions unless otherwise noted: CW, VD = + 20 V, IDQ = 64 mA, VG = -2.5V +/- typical, TBASE
 = +25 ºC, Z0 = 50 Ω
2.
TBASE is back side of 20 mil CuMo carrier plate with AuSn solder



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