SPC58NH84C3 datasheet(29/147 Pages) STMICROELECTRONICS

29 / 147 page

DS12304 Rev 5

29/147

SPC58EHx, SPC58NHx

Electrical characteristics

IDDSTBY8(12)

Total standby mode

current on VDD_LV and

VDD_HV supply, 8 KB

RAM(13)

TJ = 25 °C

—

130

380

µA

CTJ = 40 °C

—

550

DTJ = 55 °C

—

820

DTJ = 120 °C

—

1.37

PTJ = 150 °C

—

2.9

IDDSTBY128(12)

Total standby mode

current on VDD_LV and

VDD_HV supply,

128 KB RAM(13)

TJ = 25 °C

—

150

530

µA

CTJ = 40 °C

—

790

µA

DTJ =55 °C

—

1.2

DTJ = 120 °C

—

5.5

PTJ = 150 °C

—

IDDSTBY256(12)

Total standby mode

current on VDD_LV and

VDD_HV supply,

256 KB RAM(13)

TJ = 25 °C

—

190

680

µA

CTJ =40 °C

—

DTJ =55 °C

—

1.5

DTJ = 120 °C

—

2.3

PTJ = 150 °C

—

IDDSSWU1

SSWU running over all

STANDBY period with

OPC/TU commands

execution and keeping

ADC off(14)

TJ =40 °C

—

3.5

IDDSSWU2

SSWU running over all

STANDBY period with

OPC/TU/ADC

commands execution

and keeping ADC

on(15)

TJ =40 °C

—

3.5

1. The ranges in this table are design targets and actual data may vary in the given range.

2. The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered,

and they are computed in the dynamic IDD_LV and IDD_HV parameters.

3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the

consumption contributors. The tests used in validation, characterization and production are verifying that the total

consumption (leakage + dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG +IDD_LV). The

two parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions

and the software profile used.

4. Use case: 3 x e200Z4 @200 MHz with all locksteps on, HSM @100 MHz, all IPs clock enabled, Flash access with prefetch

disabled, Flash consumption includes parallel read and program/erase, all SARADC in continuous conversion, DMA

continuously triggered by ADC conversion, 4 DSPI / 8 CAN / 8 LINFlex / FlexRay / ENET0 / ENET1 / eMMC and OctoSPI

transmitting, RTC and STM running, 2 x EMIOS running (8 channels in OPWMT mode), FIRC, SIRC, FXOSC, PLL0-1

running. The switching activity estimated for dynamic consumption does not include I/O toggling, which is highly dependent

on the application. Details of the software configuration are available separately. The total device consumption is IDD_LV +

IDD_HV + IDD_LKG for the selected temperature.

5. GW use case: three cores running @200 MHz, no lockstep, HSM @100 MHz, INTC enabled, 1 EDMA triggered by ADC,

PLL0 @200 MHz PLL1 @200 MHz, XOSC = 8/40 MHz, FLASH read only 25%, 12 x CAN running @40 MHz data

4 Mbps/1 Mbps/500 Kbps, 2 x SARADC running @15 MHz with 16 conversion channels, ETH 1 Gbps, OctoSPI @200 Mhz

data 100 MB/sec, all other peripherals frozen.

Table 8. Device consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

SPC58NH84C3 Datasheet(PDF) 29 Page - STMicroelectronics

SPC58NH84C3 Datasheet(HTML) 29 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL