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PI3USB4000D Datasheet(PDF) 5 Page - Diodes Incorporated

Part # PI3USB4000D
Description  Ultra-High Voltage Protection USB2 1:2 Mux/DeMux
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PI3USB4000D Datasheet(HTML) 5 Page - Diodes Incorporated

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PI3USB4000D
A Product Line of
Diodes Incorporated
www.diodes.com
February 2021
Diodes Incorporated
PI3USB4000D
Document Number DS41992 Rev 2-2
Dynamic Electrical Characteristics
(TA = -40°C to 85°C, Typical values are at VDD = 3.3V, TA = 25°C, (unless otherwise noted))
Parameter
Description
Test Conditions
Min.
Typ. Max. Units
Control Pins – EN/SEL
CI
Input Capacitance
f=1MHz
5
pF
High Speed IO – L0/L1/C0
Con
ON Capacitance
f=1MHz
7
pF
Coff
OFF Capacitance
f=1MHz
9
pF
DDIL
Insertion Loss
f=240MHz
-0.5
dB
DDRL
Differential Return Loss
f=240MHz
-15
dB
DDOI
Differential OFF Isolation
f=240MHz
-30
dB
f=100kHz
-80
dB
DDXT
Differential Crosstalk
f=240MHz
-35
dB
BW
-3dB Bandwidth
1
GHz
Switching Characteristics(1)
(TA = -40°C to 85°C, Typical values are at VDD = 3.3V, TA = 25°C, (unless otherwise noted))
Parameter
Description
Test Conditions
Min.
Typ. Max. Units
tOVP
OVP Response Time(1)
RLX = 600Ω, time from the
voltage on C0± = 4~6V to the
voltage on LX± = 4.75V
0.5
1
µs
tPZH, tPZL
Line Enable Time
See Test Circuit for Electrical
Characteristics
20
µs
tPHZ, tPLZ
Line Disable Time
50
ns
tPd
Propagation Delay
250
ps
tb-b
Bit-to-bit Skew Within the Same Dif-
ferential Pair(1)
8
20
ps
Ton
Device Enable Time
100
µs
Toff
Device Disable Time
50
ns
Note:
1. Guaranteed by design.
Parameter
Description
Test Conditions
Min. Typ. Max. Units
IOVP
Leakage current on C0+/C0- in OVP
mode
VDD = 3.3V, VC0+ or VC0- =
20V
1
mA
ZON_GND
On-State impedance to GND
SEL = H or L VI/O = 0-3.6V
4
7
MΩ
DC Electrical Characteristics for Switching over Operating Range Cont.



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