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VP0106 Datasheet(PDF) 3 Page - Microchip Technology

Part # VP0106
Description  P-Channel Enhancement-Mode Vertical DMOS FET
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

VP0106 Datasheet(HTML) 3 Page - Microchip Technology

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2022 Microchip Technology Inc. and its subsidiaries
DS20006658A-page 3
VP0106
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
GFS 150 190
— mmho VDS = –25V, ID = –500 mA
Input Capacitance
CISS
—
45
60
pF
VGS = 0V,
VDS = –25V,
f = 1 MHz
Common-Source Output Capacitance
COSS —
22
30
pF
Reverse Transfer Capacitance
CRSS —
3
8
pF
Turn-On Delay Time
td(ON) —
4
6
ns
VDD = –25V,
ID = –500 mA,
RGEN = 25Ω
Rise Time
tr
—
3
10
ns
Turn-Off Delay Time
td(OFF) —
8
12
ns
Fall Time
tf
—
4
10
ns
DIODE PARAMETER
Diode Forward Voltage Drop
VSD
—
–1.2
–2
V
VGS = 0V, ISD = –1A (Note 1)
Reverse Recovery Time
trr
—
400
—
ns
VGS = 0V, ISD = –1A
Note 1: Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ. Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
PACKAGE THERMAL RESISTANCE
3-lead TO-92
JA
—
132
—
°C/W
THERMAL CHARACTERISTICS
Package
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(mA)
Power Dissipation
at TA = 25°C
(W)
IDR (Note 1)
(mA)
IDRM
(A)
3-lead TO-92
–250
–800
1
–250
–800
Note 1: ID (continuous) is limited by maximum rated TJ.



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