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KTC2020D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KTC2020D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KTC2020D DESCRIPTION · High Breakdown Voltage- : V(BR)CBO= 60V(Min) · High Switching Speed · High Reliability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 3.0 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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