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MP4T6325 Datasheet(PDF) 2 Page - M-pulse Microwave Inc.

Part # MP4T6325
Description  3 Volt, General Purpose Low Noise High fT Silicon Transistor
PDF  8 Pages
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Manufacturer  MPLUSE [M-pulse Microwave Inc.]
Direct Link  http://www.mpulsemw.com
Logo MPLUSE - M-pulse Microwave Inc.

MP4T6325 Datasheet(HTML) 2 Page - M-pulse Microwave Inc.

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3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MP4T6325 Series
Electrical Specifications at 25
°C
Symbol
Parameters
Test
Conditions
Units
MP4T632500
Chip
MP4T632533
SOT-23
MP4T632535
Micro-X
MP4T632539
SOT-143
fT
Gain Bandwidth
Product
VCE = 3V
IC = 10 mA
GHz
11 typ.
10 typ.
11 typ.
11 typ.
|S21E|
2
Insertion Power
Gain
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
dB
12 typ.
8 typ.
11 typ.
7 typ.
12 typ.
8 typ.
11 typ.
7 typ.
NF
Noise Figure
VCE = 3V
IC = 2 mA
f = 1 GHz
dB
1.5 typ.
1.6 typ.
1.5 typ.
1.6 typ.
GTU (max)
Unilateral Gain
VCE = 3V
IC = 10 mA
f = 1 GHz
f = 2 GHz
dB
14.5 typ.
9 typ.
13 typ.
8 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
MAG
Maximum
Available Gain
VCE = 3V
IC = 10 mA
f = 2 GHz
dB
10 typ.
9 typ.
10 typ.
9 typ.
P1dB
Power Out at 1dB
Compression
VCE = 3V
IC = 15 mA
f = 900MHz
dBm
8 typ.
8 typ.
8 typ.
8 typ.
RTH (J-A)
Thermal
Resistance
Junction/
Ambient
°C/W
650 typ.
500 typ.
625 typ.
RTH (J-C)
Thermal
Resistance
Junction/
Case
°C/W
70 max.
1
200 typ.
200 typ.
200 typ.
1.
Junction/Heat Sink RTH (J-C)
Maximum Ratings at 25
°C
Parameter
Symbol
Maximum Rating
Collector Base Voltage
VCBO
8 V
Collector-Emitter Voltage
VCEO
6 V
Emitter-Base Voltage
VEBO
1.5 V
Collector Current
IC
25 mA
Junction Temperature
Tj
200
°C
Storage Temperature
Chips or Ceramic Packages
TSTG
-65
°C to +200°C
Plastic Packages
-65
°C to +125°C
Power Dissiapation
PD
150mW
1
1.
See Typical Performance Curves for power derating.
Electrical Specifications at 25
°C
Parameters
Conditions
Symbol
Min.
Typ.
Max.
Units
Collector Cut-off Current
VCB = 5 V
IE = 0
ICBO
100
nA
Emitter Cut-off Current
VEB = 1 V
IC = 0
IEBO
1
µA
Forward Current Gain
VCE = 3 V
IC = 3 mA
hFE
20
90
200
Collector Base
Junction Capacitance
VCB = 3 V
IE = 0
f = 1 MHz
COB
0.52
0.70
pF



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