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ART2K0FESU Datasheet(PDF) 1 Page - Ampleon Netherlands B.V.

Part # ART2K0FESU
Description  Power LDMOS transistor
PDF  18 Pages
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Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

ART2K0FESU Datasheet(HTML) 1 Page - Ampleon Netherlands B.V.

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1.
Product profile
1.1 General description
Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor
has been designed to cover a wide range of applications for ISM, broadcast and
communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.
[1]
tp =10 s;  = 10 %.
[2]
Center band performance numbers across the indicated frequency range.
[3]
Typical performance numbers across the indicated frequency range.
[4]
Symmetric Ultra Wideband Doherty.
1.2 Features and benefits
High breakdown voltage enables class E operation up to VDS =53V
Qualified up to a maximum of VDS =65V
Characterized from 30 V to 65 V to support a wide range of applications
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
Excellent ruggedness with no device degradation
High efficiency
Excellent thermal stability
Designed for broadband operation
For RoHS compliance see the product details on the Ampleon website
ART2K0FE; ART2K0FES;
ART2K0FEG
Power LDMOS transistor
Rev. 4 — 22 March 2022
Product data sheet
Table 1.
Application information
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
CW
41.0
65
1600
29.0
79
CW
60.0
65
1750
26.8
80
CW pulsed [1]
64.0
63
2180
27.5
78
CW [2]
87.5 to 108
60
1650
26
83.5
DVB-T [3][4]
170 to 240
63
250
21
48
CW
352
65
1500
19
74


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