BLF0910H9LS600

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© Ampleon Netherlands B.V. 2018. All rights reserved.

Product data sheet

Rev. 2 — 22 June 2018

8 of 11

BLF0910H9LS600

Power LDMOS transistor

9. Handling information

[1]

CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.

[2]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C2A [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [2]

Table 11.

Abbreviations

Acronym

Description

CW

Continuous Wave

ESD

ElectroStatic Discharge

ISM

Industrial, Scientific and Medical

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

MTF

Median Time to Failure

RoHS

Restriction of Hazardous Substances

VSWR

Voltage Standing Wave Ratio

Table 12.

Revision history

Document ID

Release date Data sheet status

Change notice Supersedes

BLF0910H9LS600 v.2

20180622

Product data sheet

-

BLF0910H9LS600 v.1

Modifications:

• Table 4 on page 2: value ‘drain-source voltage’ updated

• Table 6 on page 3: value ‘drain-source breakdown voltage’ updated

BLF0910H9LS600 v.1

20180108

Product data sheet

-

-