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BLF978P Datasheet(PDF) 4 Page - Ampleon Netherlands B.V. |
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BLF978P Datasheet(HTML) 4 Page - Ampleon Netherlands B.V. |
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4 / 15 page ![]() BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved. Product data sheet Rev. 1 — 3 April 2020 4 of 15 BLF978P HF / VHF power LDMOS transistor VGS = 0 V; f = 1 MHz. Fig 2. Output capacitance as a function of drain-source voltage; typical values per section Table 8. RF characteristics Test signal: CW pulsed; tp =100 s; = 10 %; f = 225 MHz; RF performance at VDS =50V; IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 1200 W 23 24.5 - dB RLin input return loss PL = 1200 W - 20 12 dB D drain efficiency PL = 1200 W 78 80.6 - % amp01282 0 10 20 30 40 50 0 100 200 300 400 500 600 VDS (V) Coss oss Coss (pF) (pF) (pF) |
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