VT60M45C datasheet(2/4 Pages) VISHAY

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VT60M45C

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Vishay General Semiconductor

Revision: 09-Nov-17

Document Number: 87782

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 5 ms

Notes

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA

(2) Free air, without heatsink

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

(D = Duty Cycle = 0.5)

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 5 A

TA = 25 °C

VF (1)

0.45

IF = 15 A

0.51

IF = 30 A

0.58

0.68

IF = 5 A

TA = 125 °C

0.32

IF = 15 A

0.41

IF = 30 A

0.50

0.60

Reverse current per diode

VR = 45 V

TA = 25 °C

IR (2)

450

μA

TA = 125 °C

5.4

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT60M45C

UNIT

Typical thermal resistance (1)

per diode

RJC

1.0

°C/W

per device

0.7

per device

RJA (2)

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

VT60M45C-M3/4W

1.89

50/tube

Tube

100

125

150

175

Case Temperature (

°C)

Free air, without heatsink,

RthJA = 52 oC/W

With heatsink, RthJC = 0.7 oC/W

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = tp/T

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