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4606 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4606
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4606 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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N and P-Channel Enhancement Mode Power MOSFET
Description
The 4606 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
VDS = 30V,ID =6.9A
RDS(ON) < 21mΩ @ VGS=10V
● P-Channel
VDS = -30V,ID = -6.0A
RDS(ON) < 45mΩ @ VGS=-10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
Marking and pin assignment
SOP-8
top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
TA=25℃
6.9
-6.0
Continuous Drain Current
ID
A
Pulsed Drain Current
(Note 1)
IDM
28
-26
A
Maximum Power Dissipation
TA=25℃
PD
2.0
2.0
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
N-Ch
63.5
/W
℃
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
P-Ch
63.5
/W
℃
N-channel
P-channel
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4606
RDS(ON) < 32mΩ @ VGS=4.5V
RDS(ON) < 60mΩ @ VGS=-4.5V
www.sztuofeng.com


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