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4805 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4805
Description  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4805 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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v1.0
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P-Channel Enhancement Mode Power MOSFET
Description
The 4805 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
VDS = -30V,ID = - 8.0A
RDS(ON)typ 17mΩ @ VGS= -10V
RDS(ON)typ 22mΩ @ VGS= -4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
Marking and pin assignment
SOP-8
top view
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
G1
D1
S1
G2
D2
S2
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
48
62.5
74
110
RθJL
35
40
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±20
Gate-Source Voltage
Drain-Source Voltage
-30
Continuous Drain
Current
A
Maximum
Units
Parameter
TA=25°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-30
Pulsed Drain CurrentB
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
2
1.3
-55 to 150
TA=70°C
ID
- 9
4805


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