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TF5N10 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF5N10
Description  N -CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF5N10 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
108
---
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=4A
---
9
0
125
mΩ
VGS=4.5V , ID=2A
---
115
145
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.7
2.5
V
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=85℃
---
---
50
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.3
4.6
Qg
Total Gate Charge (10V)
VDS=30V , VGS=10V , ID=4A
---
3.57
---
nC
Qgs
Gate-Source Charge
---
0.76
---
Qgd
Gate-Drain Charge
---
0.71
---
Td(on)
Turn-On Delay Time
VDD=30V , VGS=10V ,
RG=3.3
ID=1A
---
11
---
ns
Tr
Rise Time
---
6
---
Td(off)
Turn-Off Delay Time
---
30
---
Tf
Fall Time
---
4
---
Ciss
Input Capacitance
VDS=50V , VGS=0V , f=1MHz
---
182
---
pF
Coss
Output Capacitance
---
30
---
Crss
Reverse Transfer Capacitance
---
3.6
---
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
---
2
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N -CHANNEL ENHANCEMENT MODE POWER MOSFET
2
www.sztuofeng.com
Aug 2021 V1.1
TF5N10



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