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STM32F103RCT6 Datasheet(PDF) 89 Page - STMicroelectronics

Part # STM32F103RCT6
Description  High-density performance line Arm®-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
PDF  143 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F103RCT6 Datasheet(HTML) 89 Page - STMicroelectronics

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DS5792 Rev 13
89/143
STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
135
5.3.14
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 46 are derived from tests
performed under the conditions summarized in Table 10. All I/Os are CMOS and TTL
compliant.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 42 and Figure 43 for standard I/Os, and
in Figure 44 and Figure 45 for 5 V tolerant I/Os.
Table 46. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Standard IO input low
level voltage
-
–0.3
-
0.28*(VDD-2 V)+0.8 V
V
IO FT(1) input low level
voltage
–0.3
-
0.32*(VDD-2 V)+0.75 V V
VIH
Standard IO input high
level voltage
-
0.41*(VDD-2 V)+1.3
V
-VDD+0.3
V
IO FT(1) input high level
voltage
VDD > 2 V
0.42*(VDD-2 V)+1 V
-
5.5
V
VDD 2 V
5.2
Vhys
Standard IO Schmitt
trigger voltage
hysteresis(2)
-
200
-
-
mV
IO FT Schmitt trigger
voltage hysteresis(2)
5% VDD(3)
--
mV
Ilkg
Input leakage current (4)
VSS VIN VDD
Standard I/Os
--
±1
µA
VIN= 5 V,
I/O FT
--
3
RPU
Weak pull-up equivalent
resistor(5)
VIN = VSS
30
40
50
k
Ω
RPD
Weak pull-down
equivalent resistor(5)
VIN = VDD
30
40
50
k
Ω
CIO
I/O pin capacitance
-
-
5
-
pF
1. FT = Five-volt tolerant. In order to sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be
disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order)
.



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