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RHFAHC00 Datasheet(PDF) 6 Page - STMicroelectronics

Part # RHFAHC00
Description  Rad-Hard, quad high speed NAND gate
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RHFAHC00 Datasheet(HTML) 6 Page - STMicroelectronics

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4
Radiations
Total dose (MIL-STD-883 TM 1019):
The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019
specifications.
The RHFAHC00 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specifications,
between 50 and 300 rad/s only (full CMOS technology).
All parameters, provided in Table 4. DC electrical characteristics and Table 5. AC electrical characteristics, apply
to both pre- and post-irradiation, as follows:
•
All tests are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total
ionizing dose (TID)
•
The initial characterization is performed in qualification only on both biased and unbiased parts
•
Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results
obtained during the initial qualification
Heavy-ions
The behavior of the product when submitted to heavy-ions is not tested in production. Heavy-ion trials are
performed on qualification lots only.
Table 6. Radiation
Type
Characteristics
Value
Unit
TID(1)
High-dose rate (50 rad(Si)/s) and low-dose rate (0.086 rad(Si)/s)
300
krad
Heavy-ions
SEL(2) immune up to: (with a particle angle of 60 ° at 125 °C) and a fluence of 1e+7 cm-2)
125
MeV.cm²/mg
SEL immune up to:
(with a particle angle of 0 ° at 125 °C) and a fluence of 1e+7 cm-2)
62.5
SET(3) immune up to:
(at 25 °C, and a fluence of 1e6 cm-2)
1. A total ionizing dose (TID) of 300 krad(Si) is equivalent to 3000 Gy(Si), (1 gray = 100 rad).
2. SEL: single event latch-up.
3. SET: single event transient
RHFAHC00
Radiations
DS12465 - Rev 2
page 6/15



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