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STTH60200CSAG Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH60200CSAG Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() Figure 5. Typical reverse recovery time versus dIF/dt 0 20 40 60 80 100 0 100 200 300 400 500 IF = 30 A VR = 160 V Tj=125 °C dIF/dt(A/µs) trr(ns) Figure 6. Typical reverse recovery charges versus dIF/dt 0 100 200 300 400 500 600 700 0 100 200 300 400 500 dIF/dt(A/µs) Q RR (nC) IF = 30 A VR = 160 V Tj=125 °C Figure 7. Typical junction capacitance versus reverse voltage applied 10 100 1000 1 10 100 1000 C(pF) F=1 MHz VOSC=30 mVRMS Tj=25 °C VR(V) STTH60200CHR Characteristics (curves) DS12587 - Rev 2 page 5/12 |
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