ESDA8P30-1T2 datasheet(3/11 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 2. Peak pulse power dissipation versus initial

junction temperature (typical value)

200

300

400

100

125

150

175

PPP (W)

Tj( °C)

8/20µs

typical value

Figure 3. Peak pulse power versus exponential pulse

duration (maximum values)

100

1000

100

1000

PPP (W)

tp(µs)

Tj initial = 25 °C

typical value

Figure 4. Peak power dissipation versus initial

temperature (typical value)

0.1

100

8/20µs

Tj initial = 25 °C

Ipp (A)

VCL (V)

Figure 5. Leakage current versus junction temperature

(typical value)

Ir (nA)

Tj(°C)

200

400

600

800

1000

1200

1400

1600

100

150

200

Ir = f(Tj) at Vrm = 6.3 V(typical value)

Figure 6. ESD response to IEC 61000-4-2 (+8kV contact

discharge)

Peak clamping voltage

Clamping voltage at 30 ns

Clamping voltage at 60 ns

Clamping voltage at 100 ns

20 ns/div

5 V/div

28.6 V

8.7 V

8.2V

8.0 V

Figure 7. ESD response to IEC 61000-4-2 (-8kV contact

discharge)

20 ns/div

5 V/div

Peak clamping voltage

Clamping voltage at 30 ns

Clamping voltage at 60 ns

Clamping voltage at 100 ns

- 24 V

-1.5 V

-1.0 V

ESDA8P30-1T2

Characteristics (curves)

DS12517 - Rev 3

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