2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

65

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 60 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 μA

1.75

2.50

V

VGS(Q)

Gate quiescent voltage

VDS = 28 V, IDS = 200 mA

2

4

V

VDS(on)

Static drain-source on-voltage

VGS = 1 V, IDS = 800 mA

0.5

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Static drain-source on-resistance

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

700

2700

MHz

POUT

Output power

f = 2700 MHz,

@ 1dB compression point,

pulsed CW

25

W

GPS

Power gain

18

dB

ƞD

Drain efficiency

50

%

VSWR

Load mismatch

at 25 W pulsed CW output power,

all phases

10:1

Note:

VDD= 28 V, IDQ= 300 mA, pulse width= 10 μs, duty cycle= 10%.

RF2L27025CG2

Electrical characteristics

DS13231 - Rev 2

page 3/13