2

Electrical characteristics

2.1

Static

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 0.5 mA

95

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 90 V

1

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-source leakage current

VGS = 10 V, VDS = 0 V

100

nA

VGS = -8 V, VDS = 0 V

VGS(th)

Gate threshold voltage

VDS = 50 V, IDS = 600 µA

2

2.8

V

VGS(Q)

Gate quiescent voltage

VDS = 50 V, IDS = 400 mA

2

6

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 2 A

1.2

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

1

Ω

CISS

Common source input capacitance

VGS = 0 V, VDD = 50 V,

f = 1 MHz

56

pF

CRSS

Common source feedback

capacitance

0.6

pF

COSS

Common source output

capacitance

23

pF

2.2

Dynamic

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

1500

MHz

POUT

Output power

f = 1000 MHz, at 1dB compression

point, pulsed CW

120

W

GPS

Power gain

20

dB

ηD

Drain efficiency

60

%

VSWR

Load mismatch

At 120 W pulsed CW output

power, all phase angles

10:1

Note:

VDD = 50 V, IDQ = 100 mA, pulse width = 100 μs, duty cycle = 10%.

RF5L15120CB4

Electrical characteristics

DS13384 - Rev 1

page 3/11