ST16045 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	ST16045

Description	45 W, 28 V, 0.7 to 1.7 GHz RF Power LDMOS transistor

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0 V, ID= 100 µA

IDSS

Zero-gate voltage drain

current

VGS= 0 V, VDS= 28 V

µA

VGS= 0 V, VDS= 50 V

IGSS

Gate-body leakage current

VGS=-6/10 V, VDS=0 V

±100

VGS(th)

Gate threshold voltage

VDS= 28 V, ID= 300 µA

1.5

2.5

VGS(Q)

Gate quiescent voltage

VDS=1 V, IDS=50 mA

1.7

3.2

VDS(on)

Static drain-source on-

resistance

VGS= 1 V, ID= 500 mA

0.22

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Frequency

0.7

1.7

GHz

POUT

Output power

f = 1330 MHz

GPS

Power gain

ηD

Drain efficiency

VSWR

Load mismatch

POUT = 45 W all phases

10:1

Note:

VDD=28 V, IDQ=200 mA, CW test signal.

ST16045

Electrical characteristics

DS12788 - Rev 3

page 3/13

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