50N03. datasheet(4/10 Pages) VBSEMI

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

100

1000

10000

0.5

0.9

1.3

1.7

2.1

2.5

-50 -25

255075

100 125 150 175

Axis Title

J - Junction Temperature (°C)

2nd line

D = 30 A

GS = 10 V

GS = 4.5 V

100

1000

10000

0.01

0.02

0.03

0.04

0.05

02468

Axis Title

GS - Gate-to-Source Voltage (V)

2nd line

J = 25 °C

J = 150 °C

100

1000

10000

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

Axis Title

SD - Source-to-Drain Voltage (V)

2nd line

J = 150 °C

J = 25 °C

100

1000

10000

-1.4

-1.0

-0.6

-0.2

0.2

0.6

-50 -25

100 125 150 175

Axis Title

J - Temperature (°C)

2nd line

D = 5 mA

D = 250 μA

100

1000

10000

-50 -25

255075

100 125 150 175

Axis Title

J - Junction Temperature (°C)

2nd line

D = 1 mA

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50N03.

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