SH32N65DM6AG datasheet(3/14 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

μA

VGS = 0 V, VDS = 650 V, TC(1)

300

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

μA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

3.25

4.75

RDS(on)

Static drain-source on resistance

VGS = 10 V, ID = 23 A

mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

2211

Coss

Output capacitance

106

Crss

Reverse transfer capacitance

0.3

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 520 V, VGS = 0 V

396

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.5

Total gate charge

VDD = 520 V, ID = 37 A, VGS = 0 to 10 V

(see Figure 13. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching characteristics (resistive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 18.5 A,

RG = 4.7 Ω , VGS = 10 V

(see Figure 12. Switching times

test circuit for resistive load and

Figure 17. Switching time waveform)

Rise time

td(off)

Turn-off delay time

Fall time

SH32N65DM6AG

Electrical characteristics

DS14049 - Rev 2

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