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STR2P3LLH6 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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STR2P3LLH6 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  General Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON) (at VGS=-10V) 50mΩ(Max) RDS(ON) (at VGS=-4.5V) 65mΩ(Max) RDS(ON) (at VGS=-2.5V) 90mΩ(Max) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous TC=25°C I D -5.0 A TC=100°C I D -3.5 A Drain Current – Pulsed IDM -20 A Maximum Power Dissipation P D 2.1 W Junction and Storage Temperature Range T J,TSTG -55 To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance junction-case R θJc 1.1 ℃ /W Thermal Resistance unction-to-Ambient R θJA 60 ℃ /W G D S G D S SOT23 Enhancement Mode Power MOSFET P-Channel Rev : www.leiditech.com 01.06.2018 1/6 STR2P3LLH6 STR2P3LLH6 |
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