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L99MOD54XP Datasheet(PDF) 15 Page - STMicroelectronics |
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L99MOD54XP Datasheet(HTML) 15 Page - STMicroelectronics |
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15 / 35 page ![]() DS12616 Rev 4 15/35 L99MOD54XP Electrical specifications 34 tr in Rise time of input signal DI, CLK, CSN VCC = 5 V - 100 ns tf in Fall time of input signal DI, CLK, CSN VCC = 5 V - 100 ns 1. DI timing parameters tested in production by a passed / failed test: Tj = -40 °C / +25 °C: SPI communication @ 2 MHz. Tj = +125 °C SPI communication @ 1.25 MHz. Table 14. DI timing (continued) Symbol Parameter(1) Test condition Min. Typ. Max. Unit Table 15. DO Symbol Parameter Test condition Min. Typ. Max. Unit VDOL Output low-level VCC = 5 V, ID = -2 mA 0.2 0.4 V VDOH Output high-level VCC = 5 V, ID = 2 mA VCC - 0.4 VCC - 0.2 V IDOLK 3-state leakage current VCSN = VCC, 0V < VDO < VCC -10 10 μA CDO (1) 3-state input capacitance VCSN = VCC, 0 V < VCC < 5.3 V 10 15 pF 1. Value of input capacity is not measured in production test. Parameter guaranteed by design. Table 16. DO timing Symbol Parameter Test condition Min. Typ. Max. Unit tr DO DO rise time CL = 100 pF, Iload = -1 mA - 80 140 ns tf DO DO fall time CL = 100 pF, Iload = 1 mA - 50 100 ns ten DO tri L DO enable time from 3-state to low-level CL = 100 pF, Iload = 1 mA pull up load to VCC - 100 250 ns tdis DO L tri DO disable time from low-level to 3-state CL = 100 pF, Iload = 4 mA pull up load to VCC - 380 450 ns ten DO tri H DO enable time from 3-state to high-level CL =100 pF, Iload = -1 mA pull down load to GND - 100 250 ns tdis DO H tri DO disable time from high-level to 3-state CL = 100 pF, Iload = -4 mA pull down load to GND - 380 450 ns td DO DO delay time VDO < 0.3 VCC, VDO > 0.7 VCC, CL = 100pF - 50 250 ns Table 17. CSN timing Symbol Parameter Test condition Min. Typ. Max. Unit tCSN_HI,stb CSN HI time, switching from standby mode Transfer of SPI command to Input Register 20 - - μs tCSN_HI,min CSN HI time, active mode Transfer of SPI command to input register 4- - μs |
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