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STL117N4LF7AG Datasheet(PDF) 4 Page - STMicroelectronics |
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STL117N4LF7AG Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 17 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs VDD = 32 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 38 ns Qrr Reverse recovery charge - 36 nC IRRM Reverse recovery current - 1.9 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% STL117N4LF7AG Electrical characteristics DS11591 - Rev 6 page 4/17 |
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